High resolution X-ray diffraction defect structure characterization in Si-doped and undoped GaN films

Publication info
  
Publication typePublication in a journal
Publication kindConference article
Publication titleHigh resolution X-ray diffraction defect structure characterization in Si-doped and undoped GaN films
Web URL
Journal titleMATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
Media type
Volume91-92
Book
Publication year2002
From page441
To page444
Publication number
Publication languageEnglish
Ethnic language of studied culture
Rangeinternational
Report year2002

Authors list
  
 1. Elżbieta Rohozińska, Zakład Badań Strukturalnych [Co-author]
 2. Małgorzata Kowalska, Studia dzienne - doktoranckie Wydziału Fizyki [Co-author]
 3. Valeri Harutyunyan, External unit [Co-author]
 4. Krzysztof Pakuła, Zakład Fizyki Ciała Stałego [Co-author]
 5. Janusz Borowski, Zakład Badań Strukturalnych [Co-author]