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1. | Effect of C-face 4H-SiC(0001) deposition on thermopower of single and multilayer graphene in AA, AB and ABC stacking
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MATERIALS Vol. 1 yr. 2014, pp. 035002 / 1-11 (Article)
Małgorzata Wierzbowska, Adam Dominiak, Giovanni Pizzi |
2. | Hole sp3-character and delocalization in (Ga,Mn)As revised with pSIC and MLWF approaches - newly found spin-unpolarized gap states of s-type below 1% of Mn
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CHEMICAL PHYSICS Vol. 430 yr. 2014, pp. 7-12 (Article)
Karolina Milowska, Małgorzata Wierzbowska |
3. | Spin-dependent Seebeck effect and huge growth of thermoelectric parameters at band edges in H- and F-doped graphene, free-standing and deposited on 4H-SiC(0001) C-face
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CARBON Vol. 80 yr. 2014, pp. 255-267 (Article)
Małgorzata Wierzbowska, Adam Dominiak |
4. | Contrasting Elastic Properties of Heavily B- and N-doped Graphene with Random Impurity Distributions Including Aggregates
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JOURNAL OF PHYSICAL CHEMISTRY C Vol. 117 Nr 39 yr. 2013, pp. DOI: 10.1021/jp403552k / 20229-20235 (Article)
Karolina Milowska, Magdalena Woińska, Małgorzata Wierzbowska |
5. | CVD formation of graphene on SiC surface in argon atmosphere
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PHYSICAL CHEMISTRY CHEMICAL PHYSICS Vol. 15 yr. 2013, pp. DOI: 10.1039/c3cp44378g / 8805-8810 (Article)
Małgorzata Wierzbowska, Adam Dominiak, Kamil Tokar |
6. | Exchange interactions and T_c in rhenium-doped silicon: DFT, DFT+U and Monte Carlo calculations
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JOURNAL OF PHYSICS-CONDENSED MATTER Vol. 24 yr. 2012, pp. 126002 / 1-7 (Article)
Małgorzata Wierzbowska |
7. | Poisoning of magnetism in silicon doped with Re, caused by a charge transfer from interstitials to substitutionals, by means of the self-interaction corrected density-functional approach
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JOURNAL OF APPLIED PHYSICS Vol. 112 yr. 2012, pp. 013919 / 1-6 (Article)
Małgorzata Wierzbowska |
8. | Forces and atomic relaxation in density functional theory with the pseudopotential self-interaction correction
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PHYSICAL REVIEW B Vol. 84 yr. 2011, pp. 245129 / 1-9 (Article)
Małgorzata Wierzbowska, Jacek Majewski |