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Autor:Agnieszka Wo�o�

                

Publikacja w czasopi¶mie

1. Application of microwave spectroscopy to studies of electron transport properties  [ LINK ]
JOURNAL OF CRYSTAL GROWTH Tom 401 r. 2014, str. 314-318 (Artyku³)
Agnieszka Wo³o¶, Aneta Drabiñska
2. Reduction of bulk carrier concentration in Bridgman-grown Bi2Se3 topological insulator by crystallization with Se excess and Ca doping.
JOURNAL OF CRYSTAL GROWTH Tom 407 r. 2014, str. 63-67 (Artyku³)
A. Hruban, S. Strzelecka, A. Materna, Agnieszka Wo³o¶, E. Jurkiewicz-Wegner, M. Piersa, W. Or³owski, W. Dalecki, Maria Kamiñska, M. Romaniec
3. Enhancement of elastic and inelastic scattering lengths in quasi-free-standing graphene measured with contactless microwave spectroscopy  [ LINK ]
PHYSICAL REVIEW B Tom 88 Nr 16 r. 2013, str. 165413 / 1-6 (Artyku³)
Aneta Drabiñska, Maria Kamiñska, Agnieszka Wo³o¶, W³odek Strupiñski, Andrzej Wysmo³ek, Witold Bardyszewski, Rafa³ Bo¿ek, Jacek Baranowski
4. Microwave studies of weak localization and antilocalization in epitaxial graphene  [ LINK ]
AIP CONFERENCE PROCEEDINGS Tom 1566 r. 2013, str. 159-160 (Artyku³ konferencyjny)
Aneta Drabiñska, Agnieszka Wo³o¶, Maria Kamiñska, W³odek Strupiñski, Jacek Baranowski
5. Three-dimensional topological insulators Bi2Te3, Bi2Se3, and Bi2Te2Se - a microwave spectroscopy study  [ LINK ]
AIP CONFERENCE PROCEEDINGS Tom 1566 r. 2013, str. 197-198 (Artyku³ konferencyjny)
Agnieszka Wo³o¶, Aneta Drabiñska, Szymon Szyszko, Maria Kamiñska, Gra¿yna Strzelecka, Andrzej Hruban, Andrzej Materna, Micha³ Piersa
6. Contactless microwave studies of weak localization in epitaxial graphene  [ LINK ]
PHYSICAL REVIEW B Tom 86 Nr 4 r. 2012, str. 045421-045421 (Artyku³)
Aneta Drabiñska, Agnieszka Wo³o¶, Maria Kamiñska, Wlodek Strupiñski, Jacek Baranowski
7. Landau-Level Spectroscopy of Relativistic Fermions with Low Fermi Velocity in the Bi2Te3 Three-Dimensional Topological Insulator  [ LINK ]
PHYSICAL REVIEW LETTERS Tom 109 Nr 24 r. 2012, str. 247604 / 247604-247604 (Artyku³)
Agnieszka Wo³o¶, Szymon Szyszko, Aneta Drabiñska, Maria Kamiñska, Stanis³awa Strzelecka, Andrzej Hruban, Andrzej Materna, Miros³aw Piersa
8. Electron spin resonance and Rashba field in GaN-based materials  [ LINK ]
PHYSICA B-CONDENSED MATTER Tom 406 Nr 13 r. 2011, str. 2548-2554 (Artyku³)
Agnieszka Wo³o¶, Zbigniew Wilamowski, Czes³aw Skierbiszewski, Aneta Drabiñska, Boles³aw £ucznik, Izabela Grzegory, Sylwester Porowski
9. Diluted Magnetic III-V Semiconductors With Mn For Possible Spintronic Applications
AIP CONFERENCE PROCEEDINGS Tom 893 r. 2007, str. 1201-1202 (Artyku³ konferencyjny)
Agnieszka Wo³o¶, Marcin Zaj±c, Jacek Gosk, Krzysztof Korona, Dariusz Wasik, Andrzej Wysmo³ek, M Palczewska, I. Grzegory, M. Bockowski, M. Piersa, G. Strzelecka, A. Hruban, Maria Kamiñska, Andrzej Twardowski
10. Magnetic anisotropy of bulk GaN:Mn single crystals codoped with Mg acceptors
PHYSICAL REVIEW B Tom 71 r. 2005, str. 094432 / 1-7 (Artyku³)
Jacek Gosk, Marcin Zaj±c, Agnieszka Wo³o¶, Maria Kamiñska, Andrzej Twardowski
11. Mn Impurity in Bulk GaAs Crystal  [ LINK ]
ACTA PHYSICA POLONICA A Tom 108 Nr 5 r. 2005, str. 825-830 (Artyku³)
M Paw³owski, M Piersa, Agnieszka Wo³o¶, M Palczewska, G Strzelecka, A Hruban, J Gosk, Maria Kamiñska, Andrzej Twardowski
12. Neutral Mn acceptor in bulk GaN in hihg magnetic fields
PHYSICAL REVIEW B Tom 70 r. 2004, str. 245202 / 1-8 (Artyku³)
Agnieszka Wo³o¶, Andrzej Wysmo³ek, Maria Kamiñska, Andrzej Twardowski, M Boækowski, I Grzegory, S Porowski, M Potemski
13. Optical and magnetic properties of Mn in bulk GaN
PHYSICAL REVIEW B Tom 69 r. 2004, str. 115210 / 1-7 (Artyku³)
Agnieszka Wo³o¶, M Palczewska, Marcin Zaj±c, Jacek Gosk, Maria Kamiñska, Andrzej Twardowski, M Boækowski, I Grzegory, S Porowski
14. Proporties of arsenic antisite defects in Ga(1-x)Mn(x)As
JOURNAL OF APPLIED PHYSICS Tom 96 Nr 1 r. 2004, str. 530-533 (Artyku³)
Agnieszka Wo³o¶, Maria Kamiñska, M Palczewska, Andrzej Twardowski, X Liu, T Wojtowicz, J Furdyna
15. Mn Impurity in GaN Studied by Electron Paramagnetic Resonance  [ LINK ]
ACTA PHYSICA POLONICA A Tom 103 Nr 6 r. 2003, str. 595-600 (Artyku³ konferencyjny)
Agnieszka Wo³o¶, M Palczewska, Z Wilamowski, Maria Kamiñska, Andrzej Twardowski, M Boækowski, I Grzegory, S Porowski
16. S-d exchange interaction in GaN : Mn studied by electron paramagnetic resonance
APPLIED PHYSICS LETTERS Tom 83 r. 2003, str. 5428-5430 (Artyku³)
Agnieszka Wo³o¶, M Palczewska, Z Wilamowski, Maria Kamiñska, Andrzej Twardowski, M Boækowski, I Grzegory, Sylwester Porowski
17. Be-doped low-temperature-grown GaAs material for optoelectronic switches
IEE PROCEEDINGS-OPTOELECTRONICS Tom 149 r. 2002, str. 111-115 (Artyku³)
Arunas Krotkus, K. Bertulis, Maria Kamiñska, Krzysztof Korona, Agnieszka Wo³o¶, J. Siegert, ... ...
18. Measurement of Very Small Zeeman Splittings in GaN:Mn,Mg by Faraday Rotation  [ LINK ]
ACTA PHYSICA POLONICA A Tom 102 Nr 4-5 r. 2002, str. 695-699 (Artyku³)
Agnieszka Wo³o¶, Piotr Kossacki, Andrzej Golnik, Maria Kamiñska, Jan Gaj, Andrzej Twardowski, I Grzegory, M Boækowski, Sylwester Porowski
19. Electron spin resonance of erbium in gallium nitride
SOLID STATE COMMUNICATIONS Tom 114 r. 2000, str. 39-41 (Artyku³)
Maria Palczewska, Agnieszka Wo³o¶, Maria Kamiñska, Izabela Grzegory, Maciej Boækowski, Stanis³aw Krukowski, Tadeusz Suski, Sylwester Porowski

Publikacja w ksi±¿ce

20. Magnetic Impurities In Wide Band-gap III-V Semiconductors
w: Spintronics, Volume 82 (Semiconductors and Semimetals), str. 325-370, Academic Press, Elsevier, r. 2008 (Esej lub rozdzia³ w ksi±¿ce)
Agnieszka Wo³o¶, Maria Kamiñska
21. Neutral Mn Acceptor in GaN Studied in High Magnetic Fields
w: Proc.Conf. Physics of Semiconductors ICPS-27: 27th Intern. Conf. Phys. Semicond., Flagstaff, Arizona 16-30 July 2004, str. 251-252, AIP (American Institute of Physics) Publishing, r. 2005 (Artyku³ konferencyjny)
Agnieszka Wo³o¶, Andrzej Wysmo³ek, Maria Kamiñska, Andrzej Twardowski, M Boækowski, I Grzegory, S Porowski, M Potemski
22. Electron and Hole Trapping Parameters of Low-temperature-grown GaAs
w: Proceedings 12th International Conference on Semiconducting & Insulating Materials, str. 217-220, r. 2003 (Artyku³ konferencyjny)
J Roux, J Coutaz, S Marcinkevicius, J Siegert, Maria Kamiñska, Agnieszka Wo³o¶, A Krotkus
23. Mn impurity in GaN monocrystals
w: Proc. 26th Conf. Phys. Semicond., Edinburgh 2002, str. D441-D447, IOP Publishing, r. 2003 (Artyku³ konferencyjny)
Agnieszka Wo³o¶, Marcin Zaj±c, Jacek Gosk, M Palczewska, Maria Kamiñska, Andrzej Twardowski, M Boækowski, I Grzegory, S Porowski
24. Influence of Be doping on material properties of low-temperature-grown GaAs
w: Defect and Impurity Engineered Semiconductors and Devices III, str. 1.4.1-1.4.6, Materials Research Society, r. 2002 (Artyku³ konferencyjny)
Saulius Marcinkevicius, Andreas Gaarder, Jorg Siegert, Jean-Francois Roux, Jean-Louis Coutaz, Agnieszka Wo³o¶, Maria Kamiñska, Ramunas Adomavicius, Klemensas Bertulis, Arunas Krotkus