| ||
| 26. | Fine Structure of Effective Mass Acceptors in Gallium Nitride
PHYSICAL REVIEW LETTERS Tom 91 Nr 22 r. 2003, str. 226404 / 1-4 (Artyku³) Roman Stêpniewski, Andrzej Wysmo³ek, Marek Potemski, Krzysztof Paku³a, Jacek Baranowski, I Grzegory, S Porowski, G Martinez, P Wyder | |
| 27. | Light-induced narrowing of excitonic absorption lines in GaN
APPLIED PHYSICS LETTERS Tom 83 Nr 17 r. 2003, str. 3510-3512 (Artyku³) Pawe³ Trautman, Krzysztof Paku³a, Rafa³ Bo¿ek, Jacek Baranowski | |
| 28. | Localization effects in GaN / AlGaN quantum well - photoluminescence studies
[ LINK ]
ACTA PHYSICA POLONICA A Tom 103 Nr 6 r. 2003, str. 573-578 (Artyku³ konferencyjny) Barbara Piêtka, Andrzej Wysmo³ek, Rafa³ Bo¿ek, Krzysztof Korona, Roman Stêpniewski, Wojciech Knap, Krzysztof Paku³a, Jacek Baranowski, N Grandjean, J Massies, P Prystawko, I Grzegory | |
| 29. | Photoluminescence of GaN layers studied with two-color spectroscopy
SOLID-STATE ELECTRONICS Tom 47 r. 2003, str. 579-581 (Artyku³) Maciej Wojdak, M Klik, M Forcales, T Gregorkiewicz, J Wells, Krzysztof Paku³a, Jacek Baranowski, Sylwester Porowski | |
| 30. | Triple axis diffractometric investigations of the microstructure of thin AlxGa1-xN epitaxial films
CRYSTAL RESEARCH AND TECHNOLOGY Tom 38 Nr 11 r. 2003, str. 951-955 (Artyku³) El¿bieta Rohoziñska, Malgorzata Kowalska, Krzysztof Paku³a | |
| 31. | Tuning of Spectral Sensitivity of AlGaN / GaN UV Detector
[ LINK ]
ACTA PHYSICA POLONICA A Tom 103 Nr 6 r. 2003, str. 675-681 (Artyku³ konferencyjny) Krzysztof Korona, Aneta Drabiñska, A Trajnerowicz, Rafa³ Bo¿ek, Krzysztof Paku³a, Jacek Baranowski | |
| 32. | High resolution X-ray diffraction defect structure characterization in Si-doped and undoped GaN films
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY Tom 91-92 r. 2002, str. 441-444 (Artyku³ konferencyjny) El¿bieta Rohoziñska, Ma³gorzata Kowalska, Valeri Harutyunyan, Krzysztof Paku³a, Janusz Borowski | |
| 33. | Investigation of 2D Electron Gas on AlGaN GaN Interface by Electroreflectance
PHYSICA STATUS SOLIDI C-CONFERENCES Nr 1 r. 2002, str. 329-333 (Artyku³ konferencyjny) Aneta Drabiñska, Krzysztof Korona, Rafa³ Bo¿ek, Jacek Baranowski, Krzysztof Paku³a, Tomasz Tomaszewicz, Jerzy Gronkowski | |
| 34. | Low field excitonic Zeeman splittings in gallium nitride
SOLID STATE COMMUNICATIONS Tom 124 r. 2002, str. 89-92 (Artyku³) Andrzej Golnik, Wojciech Mac, Krzysztof Paku³a, Roman Stêpniewski, C Testelin, Jan Gaj | |
| 35. | Cathodoluminescence and depth-profiling cathodoluminescence studies of interface properties in MOCVD-grown InGaN / GaN / sapphire structures: role of GaN buffer layer
APPLIED SURFACE SCIENCE Tom 177 r. 2001, str. 22-31 (Artyku³) M Godlewski, E Go³dys, M Phillips, Krzysztof Paku³a, Jacek Baranowski | |
| 36. | Cathodoluminescence investigations of interfaces in InGaN / GaN / sapphire structures
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS Tom 228 r. 2001, str. 179-182 (Artyku³) M Godlewski, E Goldys, K Butcher, M Phillips, Krzysztof Paku³a, Jacek Baranowski | |
| 37. | Extended x-ray absorption fine structure and photoluminescence study of Er-implanted GaN films
SEMICONDUCTOR SCIENCE AND TECHNOLOGY Tom 16 r. 2001, str. 77-80 (Artyku³) D Wruck, K Lorenz, R Vianden, B Reinhold, H Mahnke, Jacek Baranowski, Krzysztof Paku³a, L Parthier, F Henneberger | |
| 38. | In-plane and in-depth nonuniformities in defect distribution in GaN and InGaN epilayers
PHYSICA B-CONDENSED MATTER Tom 308-310 r. 2001, str. 102-105 (Artyku³) M Godlewski, E Goldys, G Pozina, B Monemar, Krzysztof Paku³a, Jacek Baranowski, P Prystawko, M Leszczyñski | |
| 39. | Influence of dopants and substrate material on the formation of Ga vacancies in epitaxial GaN layers
PHYSICAL REVIEW B Tom 63 Nr 4 r. 2001, str. 045205 / 1-8 (Artyku³) J Oila, V Ranki, J Kivioja, K Saarinen, P Hautojarvi, J Likonen, Jacek Baranowski, Krzysztof Paku³a, T Suski, M Leszczyñski, I Grzegory | |
| 40. | Strain relaxation in Ga1-xInxN thin layers grown on GaN sublayers
JOURNAL OF ALLOYS AND COMPOUNDS Tom 328 r. 2001, str. 199-205 (Artyku³ konferencyjny) El¿bieta Rohoziñska, Jerzy Gronkowski, Krzysztof Paku³a, Ma³gorzata Majer, Ma³gorzata Kowalska | |
| 41. | The role of oxygen and hydrogen in GaN
PHYSICA B-CONDENSED MATTER Tom 308-310 r. 2001, str. 117-121 (Artyku³ konferencyjny) Bernard Clerjaud, Denis Cote, Claude Naud, R. Bouanani-Rahbi, Dariusz Wasik, Krzysztof Paku³a, Jacek Baranowski, Tadeusz Suski, El¿bieta Litwin-Staszewska, M. Bockowski, Iza Grzegory | |
| 42. | X-ray Diffraction Study of Composition Inhomogeneities in Ga1-xInxN Thin Layers
CRYSTAL RESEARCH AND TECHNOLOGY Tom 36 Nr 8-10 r. 2001, str. 903-910 (Artyku³ konferencyjny) El¿bieta Rohoziñska, Jerzy Gronkowski, Ma³gorzata Kowalska, Ma³gorzata Majer, Krzysztof Paku³a | |
| 43. | Characterization of InGaN/GaN heterostructures by means of RBS/ channeling
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS Tom 161 r. 2000, str. 539-543 (Artyku³) L Nowicki, R Ratajczak, A Turos, Jacek Baranowski, R Banasik, Krzysztof Paku³a | |
| 44. | Far-Infrared and selective photoluminescence studies of shallow donors in GaN hetero- and homoepitaxial layers
APPLIED PHYSICS LETTERS Tom 77 Nr 9 r. 2000, str. 1348-1350 (Artyku³) G Neu, M Teisseire, E Frayssinet, Wojciech Knap, Marcin Sadowski, Andrzej Witowski, Krzysztof Paku³a, M Leszczyñski, P Prystawko | |
| 45. | Infrared spectroscopy of Mg-H local vibrational mode in GaN with polarized light
PHYSICAL REVIEW B Tom 61 r. 2000, str. 8238-8241 (Artyku³) B Clerjaud, D Cote, A Lebkiri, C Naud, Jacek Baranowski, Krzysztof Paku³a, Dariusz Wasik, Tadeusz Suski | |
| 46. | Elctron effective mass in hexagonal GaN
APPLIED PHYSICS LETTERS Tom 75 Nr 26 r. 1999, str. 4154-4155 (Artyku³) Andrzej Witowski, Krzysztof Paku³a, Jacek Baranowski, Marcin Sadowski, Peter Wyder | |
| 47. | Polarised magnetoluminescence of excitons in homoepitaxial GaN layers
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS Tom 216 Nr 1 r. 1999, str. 11-15 (Artyku³ konferencyjny) Andrzej Wysmo³ek, Marek Potemski, Jerzy £usakowski, Krzysztof Paku³a, Jacek Baranowski, Roman Stêpniewski | |
| 48. | Effect of pressure on Exciton Energies of Homoepitaxial GaN
SOLID STATE COMMUNICATIONS Tom 108 r. 1998, str. 433-438 (Artyku³) Z. Liu, Krzysztof Korona, K. Syassen, Jurgen Kuhl, Krzysztof Paku³a, Jacek Baranowski, Iza Grzegory, Sylwester Porowski | |
| 49. | High Resistivity GaN Single Crystalline Substrates
ACTA PHYSICA POLONICA A Tom 92 Nr 5 r. 1997, str. 958-962 (Artyku³ konferencyjny) Pawe³ Trautman, Krzysztof Paku³a, Jacek Baranowski, Sylwester Porowski, Micha³ Boækowski, B. £ucznik, Izabela Grzegory, M. Wróblewski, H. Teisseyre, Micha³ Leszczyñski, E. Litwin-Staszewska, Tadeusz Suski | |
| 50. | Exciton Region Reflectance of Homoepitaxial GaN Layers
[ LINK ]
APPLIED PHYSICS LETTERS Tom 69 r. 1996, str. 788-790 (Artyku³) Krzysztof Korona, Andrzej Wysmo³ek, Krzysztof Paku³a, Roman Stêpniewski, Jacek Baranowski, Iza Grzegory, B Lucznik, M Wróblewski, Sylwester Porowski | |