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Autor:Tomasz S�upi�ski

                

Publikacja w czasopi¶mie

26. Interlayer coupling in (In,Mn)As/InAs/(In,Mn)As magnetic semiconductor trilayer structures
JOURNAL OF APPLIED PHYSICS Tom 91 r. 2002, str. 7902-7909 (Artyku³)
S Yanagi, H Munekata, Y Kitamoto, A Oiwa, Tomasz S³upiñski
27. Photo-carrier-induced magnetism in (In,Mn)As/GaSb magnetic alloy semiconductor heterostructures
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES Tom 13 r. 2002, str. 516-521 (Artyku³)
H Munekata, A Oiwa, Tomasz S³upiñski
28. Preparation of ferromagnetic InMnAs with relatively low hole concentration and Curie temperature 50K
JOURNAL OF CRYSTAL GROWTH Tom 237-239 r. 2002, str. 1326-1330 (Artyku³)
Tomasz S³upiñski, A Oiwa, S Yanagi, H Munekata
29. Preparation of ferromagnetic quaternary (In,Ga,Mn)As
JOURNAL OF CRYSTAL GROWTH Tom 237-239 r. 2002, str. 1331-1333 (Artyku³)
Tomasz S³upiñski, H Munekata, A Oiwa
30. Control of magnetization reversal process by light ilumination in ferromagnetic semiconductor heterostructure p-(In,Mn)As/GaSb
APPLIED PHYSICS LETTERS Tom 78 r. 2001, str. 518-522 (Artyku³)
A Oiwa, Tomasz S³upiñski, H Munekata
31. Effect of light illumination on the process of magnetization reversal in carrier-induced ferromagnetic semiconductors
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES Tom 10 r. 2001, str. 201-204 (Artyku³)
A Oiwa, Tomasz S³upiñski, H Munekata
32. Inelastic Light Scattering on Coupled Plasmon-LO Phonon Modes in High Magnetic Fields
PHYSICA B-CONDENSED MATTER Tom 298 Nr 1-4 r. 2001, str. 216-220 (Artyku³ konferencyjny)
Andrzej Wysmo³ek, M. Potemski, Tomasz S³upiñski
33. Local order of Te impurity atoms and free electron concentration in heavily doped GaAs:Te
THIN SOLID FILMS Tom 367 r. 2000, str. 227-231 (Artyku³)
El¿bieta Rohoziñska, Tomasz S³upiñski
34. X-ray diffuse scattering characterisation of microdefects in highly Te-doped annealed GaAs crystals
JOURNAL OF PHYSICS D-APPLIED PHYSICS Tom 31 r. 1998, str. 1883-1886 (Artyku³)
Janusz Borowski, Jerzy Gronkowski, El¿bieta Rohoziñska, Tomasz S³upiñski
35. X-ray diffuse scattering characterization of microdefects in highly Te-doped annealed GaAs crystals
JOURNAL OF PHYSICS D-APPLIED PHYSICS Tom 31 r. 1998, str. 1883-1887 (Artyku³)
Janusz Borowski, Jerzy Gronkowski, El¿bieta Rohoziñska, Tomasz S³upiñski
36. First X-ray evidence of heterogeneous impurity correlations in a very highly doped GaAs:Te
ACTA PHYSICA POLONICA A Tom 92 r. 1997, str. 971-974 (Artyku³)
Tomasz S³upiñski, El¿bieta Rohoziñska
37. On correlations between extended defects formation and electron concentration changes caused by annealing of GaAs:Te
ACTA PHYSICA POLONICA A Tom 90 r. 1996, str. 739-743 (Artyku³)
J. Borysiuk, J. Kozubowski, Tomasz S³upiñski
38. Te shallow donor solubility mechanism in GaAs
ACTA PHYSICA POLONICA A Tom 90 r. 1996, str. 1080-1084 (Artyku³)
Tomasz S³upiñski, El¿bieta Rohoziñska, T. Harasimowicz

Publikacja w ksi±¿ce

39. Synchrotron Topographic Investigation of Multicompound AIIIBV Bulk Crystals  [ LINK ]
w: Hasylab Jahresbericht 2007, str. 835-835, r. 2007 (Komunikat)
Krzysztof Wieteska, Wojciech Wierzchowski, Jerzy Gronkowski, Grzegorz Kowalski, Tomasz S³upiñski, Walter Graeff
40. High-Resolution X-Ray Diffraction Study OF CZ-Grown GaAsP Crystals
w: 8th Biennial Coference on High Resolution X-ray Diffraction and Imaging- Book of Abstracts XTop-2006, str. 165-165, r. 2006 (Komunikat)
Jerzy Gronkowski, Aleksandra Czy¿ak, Grzegorz Kowalski, Tomasz S³upiñski
41. X-ray high-resolution diffraction study of GaInAs and GaAsP grown by a modified Czochralski method
w: E-MRS 2005 Fall Meeting, Warsaw, 5–9 September 2005, str. 135-135, r. 2005 (Komunikat)
Jerzy Gronkowski, Grzegorz Kowalski, Tomasz S³upiñski
42. Cyclotron Resonance of Itinerant Holes in Ferromagnetic InMnAs / GaSb Heterostructures
w: Proc. 26th Conf. Phys. Semicond., Edinburgh 2002, str. P3201-P3206, IOP Publishing, r. 2003 (Artyku³ konferencyjny)
G Khodaparast, J Kono, Y Matsuda, T Ikaida, S Ikeda, N Miura, Tomasz S³upiñski, A Oiwa, H Munekata
43. Coupled plasmon-LO phonon modes at high magnetic fields
w: Proc. of the 25-th International Conference on the Physics of Semiconductors, Osaka, Japan 17-22, 2000, ed. by N. Miura and T. Ando, str. 87-88, Springer, r. 2001 (Artyku³ konferencyjny)
Andrzej Wysmo³ek, Marek Potemski, Tomasz S³upiñski
44. Badania kryszta³ów GaAs metodami wysokorozdzielczej dyfrakcji promieni X
w: Wzrost i Charakteryzacja Kryszta³ów, str. 50-56, Instytut Technologii Materia³ów Elektronicznych, r. 2000 (Artyku³ konferencyjny)
El¿bieta Rohoziñska, Jerzy Gronkowski, Tomasz S³upiñski, Ma³gorzata Kowalska
45. Local order of Te impurity atoms in heavily doped GaAs:Te and accompanying electron localization effect
w: Self-Organized Processes in Semiconductor Alloys, str. 261-266, Materials Research Society, r. 2000 (Artyku³ konferencyjny)
El¿bieta Rohoziñska, Tomasz S³upiñski
46. Shallow Donor Solubility Mechanism: Tellurium in GaAs
w: Shallow-Level Centers in Semiconductors - Proc. 7th Int. Conf., Amsterdam, 1996 , str. 369-374, World Scientific Publ.,, r. 1997 (Artyku³ konferencyjny)
Tomasz S³upiñski, El¿bieta Rohoziñska, T. Harasimowicz

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